b-56 01/99 j210, j211 n-channel silicon junction field-effect transistor audio amplifiers general purpose amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 10 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj210, SMPJ211 at 25c free air temperature: j210 j211 process nj26l static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1a, v ds = ? v gate reverse current i gss C 100 C 100 pa v gs = C 15 v, v ds = ? v gate operating current i g C 10 C 10 pa v ds = 20 v, i d = 1 ma gate source cutoff voltage v gs(off) C 1 C 3 C 2.5 C 4.5 v v ds = 15 v, i d = 1 na drain saturation current (pulsed) i dss 215720mav ds = 15 v, v gs = ? v dynamic electrical characteristics common source forward g fs 4000 12000 6000 12000 s v ds = 15 v, v gs = ? v f = 1 khz transconductance common source output conductance g os 150 200 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 15 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 15 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 10 10 nv/ hz v ds = 15 v, v gs = ?v f = 1 khz noise voltage 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-56
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